BRAND: Samsung
CATEGORY: Components
SPECIFICATIONS:
Form Factor | M.2 (2280) |
Capacity | 2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise) |
Interface | PCIe Gen 4.0 x4, NVMe 2.0 |
Dimension (Pack: WxHxD) | 80 x 22 x 2.3 mm |
Weight | Max 9.0g Weight |
Storage Memory | Samsung V-NAND 3-bit MLC |
Controller | Samsung in-house Controller |
Cache Memory | Samsung 1GB Low Power DDR4 SDRAM |
TRIM Support | Supported |
S.M.A.R.T Support | Supported |
GC (Garbage Collection) | Auto Garbage Collection Algorithm |
Encryption Support | AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive) |
WWN Support | Not supported |
Device Sleep Mode Support | Yes |
Sequential Read | Up to 7,450 MB/s * Performance may vary based on system hardware & configuration |
Sequential Write | Up to 6,900 MB/s * Performance may vary based on system hardware & configuration |
Random Read (4KB, QD32) | Up to 1,200,000 IOPS * Performance may vary based on system hardware & configuration |
Random Write (4KB, QD32) | Up to 1,550,000 IOPS * Performance may vary based on system hardware & configuration |
Random Read (4KB, QD1) | Up to 22,000 IOPS * Performance may vary based on system hardware & configuration |
Random Write (4KB, QD1) | Up to 80,000 IOPS * Performance may vary based on system hardware & configuration |
Average Power Consumption (system level) | *Average: 5.4 W*Maximum: 7.8 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration |
Power consumption (Idle) | Max. 50 mW * Actual power consumption may vary depending on system hardware & configuration |
Allowable Voltage | 3.3 V ± 5 % Allowable voltage |
Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) |
Operating Temperature | 0 - 70 ℃ Operating Temperature |
Shock | 1,500 G & 0.5 ms (Half sine) |
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